Reduction in L10 Phase Transition Temperature of PLD Grown FePt Thin Films by Pre-annealing Pulsed Laser Exposure
نویسندگان
چکیده
A pre-annealing atmospheric pulsed laser exposure was applied to decrease the phase transition (from chemically disordered A1 phase to chemically ordered L10 phase) temperature of FePt nano-particles on a Si (100) substrate. Different pre-annealing laser energy densities of 0.024 and 0.079 J/cm were utilized to expose the pulsed laser deposition (PLD) FePt thin film samples under atmospheric conditions. Subsequently, FePt thin film samples were annealed at different temperatures of 300 and 400 oC to observe the influence of laser exposure on the phase transition temperature. The phase transition temperature was decreased from conventional 600 oC to 400 oC by one shot pre-annealing atmospheric pulsed laser exposure.
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